A. Das1,
G. P. Dimitrakopulos2,
Y. Kotsar1,
A. Lotsari2,
Th. Kehagias2,
Ph. Komninou2,
and E. Monroy1
1 CEA/CNRS group “Nanophysique et semiconductors,” INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
2 Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece
Semipolar (11-22)-oriented InGaN/GaN quantum dots (QDs) emitting in the 380–620 nm spectral range were synthesized by plasma-assisted molecular-beam epitaxy. The influence of the growth temperature on the properties of InGaN QDs has been investigated by photoluminescence and transmission electron microscopy. Growth temperatures low enough to prevent indium desorption provide a favorable environment to semipolar plane (11-22) to enhance the internal quantum efficiency of InGaN/GaN nanostructures.
©
2011
American Institute of Physics
